Donor behavior of Sb in ZnO

Journal Article · Wed Aug 01 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4742984· OSTI ID:22089377

Liu, H. Y.; Izyumskaya, N.; Avrutin, V.; Oezguer, Ue.; Morkoc, H. ^[1]; Yankovich, A. B.; Kvit, A. V.; Voyles, P. M. ^[2]

---

1. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
2. Department of Materials Science and Engineering, University Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

Electrical behavior of Sb in ZnO:Sb layers doped in a wide concentration range was studied using temperature dependent Hall effect measurements. The layers were grown by plasma-enhanced molecular beam epitaxy, and the Sb concentration was changed by varying the Sb flux, resulting in electron concentrations in the range of 10{sup 16} to nearly 10{sup 20} cm{sup -3}. Upon annealing, the electron concentration increased slightly and more notable was that the electron mobility significantly improved, reaching a room-temperature value of 110 cm{sup 2}/V s and a low-temperature value of 145 cm{sup 2}/V s, close to the maximum of {approx}155 cm{sup 2}/V s set by ionized impurity scattering. Hall data and structural data suggest that Sb predominantly occupies Zn sublattice positions and acts as a shallow donor in the whole concentration range studied. In the layers with high Sb content ({approx}1 at. %), acceptor-type compensating defects (possibly Sb on oxygen sites and/or point-defect complexes involving Sb{sub O}) are formed. The increase of electron concentration with increasing oxygen pressure and the increase in ZnO:Sb lattice parameter at high Sb concentrations suggest that acceptors involving Sb{sub O} rather than Sb{sub Zn}-2V{sub Zn} complexes are responsible for the compensation of the donors.

• OSTI ID: 22089377
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 3; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANTIMONY
ANTIMONY ADDITIONS
CRYSTAL DEFECTS
DOPED MATERIALS
ELECTRON MOBILITY
ELECTRONS
HALL EFFECT
IMPURITIES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
OXYGEN
PLASMA
POINT DEFECTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES