Magnetically active vacancy related defects in irradiated GaN layers
- Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto Espoo (Finland)
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
- Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw (Poland)
We present the studies of magnetic properties of 2 MeV {sup 4}He{sup +}-irraadiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3 and 8.3 Multiplication-Sign 10{sup 17}cm{sup -3} showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T=5K with coercive field of about H{sub C} Almost-Equal-To 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically active defects with respect to the total Ga-vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.
- OSTI ID:
- 22089364
- Journal Information:
- Applied Physics Letters, Vol. 101, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALPHA PARTICLES
CHEMICAL VAPOR DEPOSITION
COERCIVE FORCE
CRYSTAL DEFECTS
CRYSTALS
GALLIUM NITRIDES
HYDROGEN
HYSTERESIS
ION BEAMS
IRRADIATION
LAYERS
MAGNETIC MOMENTS
MAGNETIC PROPERTIES
MEV RANGE 01-10
OXYGEN
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SUPERPARAMAGNETISM
TEMPERATURE RANGE 0273-0400 K
VACANCIES