Growth and characterizations of semipolar (1122) InN

Journal Article · Sun Jul 01 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4733997· OSTI ID:22089296

Dinh, Duc V.; Skuridina, D.; Solopow, S.; Frentrup, M.; Pristovsek, M.; Vogt, P.; Kneissl, M. ^[1]; Ivaldi, F.; Kret, S.; Szczepanska, A. ^[2]

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1. Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
2. Institute of Physics, Polish Academy of Science, Al. Lotnikow 32/46, 02668 Warsaw (Poland)

We report on metal-organic vapor phase epitaxial growth of (1122) InN on (1122) GaN templates on m-plane (1010) sapphire substrates. The in-plane relationship of the (1122) InN samples is [1123]{sub InN} Double-Vertical-Line Double-Vertical-Line [0001]{sub sapphire} and [1100]{sub InN} Double-Vertical-Line Double-Vertical-Line [1210]{sub sapphire}, replicating the in-plane relationship of the (1122) GaN templates. The surface of the (1122) InN samples and the (1122) GaN templates shows an undulation along [1100]{sub InN,GaN}, which is attributed to anisotropic diffusion of indium/gallium atoms on the (1122) surfaces. The growth rate of the (1122) InN layers was 3-4 times lower compared to c-plane (0001) InN. High resolution transmission electron microscopy showed a relaxed interface between the (1122) InN layers and the (1122) GaN templates, consistent with x-ray diffraction results. Basal plane stacking faults were found in the (1122) GaN templates but they were terminated at the InN/(1122) GaN interface due to the presence of misfit dislocations along the entire InN/GaN interface. The misfit dislocations were contributed to the fully relaxation and the tilts of the (1122) InN layers. X-ray photoelectron spectroscopy was used to determine the polarity of the grown (1122) InN sample, indicating an In-polar (1122) InN. The valence band maximum was determined to be at (1.7 {+-} 0.1) eV for the (1122) InN sample, comparable to In-polar c-plane InN.

• OSTI ID: 22089296
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 1; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DIFFUSION
DISLOCATIONS
GALLIUM NITRIDES
INDIUM NITRIDES
INTERFACES
ORGANOMETALLIC COMPOUNDS
RELAXATION
RESOLUTION
SEMICONDUCTOR MATERIALS
STACKING FAULTS
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY