Leakage current mechanism of amorphous and polycrystalline Ta{sub 2}O{sub 5} films grown by chemical vapor deposition

Journal Article · Fri Mar 01 04:00:00 EST 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836568· OSTI ID:220879

Aoyama, Tomonori; Saida, Shigehiko; Okayama, Yasunori; Fujisaki, Masanori; Imai, Keitaro; Arikado, Tsunetoshi ^[1]

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1. Toshiba Corp., Kawasaki, Kanagawa (Japan)

The leakage current mechanism of the chemical vapor deposition Ta{sub 2}O{sub 5} film has been investigated. In the case of an as-deposited amorphous film, the presence of impurities such as carbon and hydrogen remaining in the film leads to the Poole-Frenkel type leakage current. The oxidation of these impurities results in a reduction in leakage current. O{sub 2} plasma is especially effective for oxidizing impurities, leading to a drastic reduction of the leakage current. However, O{sub 2} plasma cannot reduce the leakage current of the Ta{sub 2}O{sub 5} film crystallized at 700 C. This leakage current is not due to C and H, but rather to Si penetrated into the Ta{sub 2}O{sub 5} film from the underlying poly-Si electrode. Therefore, the amorphous Ta{sub 2}O{sub 5} film treated by O{sub 2} plasma is most suitable for use in stacked capacitors.

• Sponsoring Organization: USDOE
• OSTI ID: 220879
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 3 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
DIELECTRIC MATERIALS
IMPURITIES
LEAKAGE CURRENT
SILICON
TANTALUM OXIDES