Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering
- Institut des Materiaux Jean Rouxel, University of Nantes, 2 rue de la Houssiniere BP 32229, 44322 Nantes cedex 3 (France)
This Letter reports the thermal conductivity of aluminium nitride (AlN) thin-films deposited by reactive DC magnetron sputtering on single-crystal silicon substrates (100) with varying plasma and magnetic conditions achieving different crystalline qualities. The thermal conductivity of the films was measured at room temperature with the transient hot-strip technique for film thicknesses ranging from 100 nm to 4000 nm. The thermal conductivity was found to increase with the thickness depending on the synthesis conditions and film microstructure. The conductivity in the bulk region of the films, so-called intrinsic conductivity, and the boundary resistance were in the range [120-210] W m{sup -1} K{sup -1} and [2-30 Multiplication-Sign 10{sup -9}] K m{sup 2} W{sup -1}, respectively, in good agreement with microstructures analysed by x-ray diffraction, high-resolution-scanning-electron-microscopy, and transmission-electron-microscopy.
- OSTI ID:
- 22080479
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 101; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CRYSTAL STRUCTURE
DEPOSITION
DIRECT CURRENT
MAGNETRONS
MICROSTRUCTURE
MONOCRYSTALS
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION