Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films
Journal Article
·
· Journal of Applied Physics
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
We report on measurements of the thermal conductivity of reactively sputtered aluminum nitride (AlN) thin films with different thickness, ranging from 100 nm to 1 {mu}m, on silicon substrates. The measurements were made at room temperature using the pulsed photothermal reflectance technique. The thermal conductivities of the sample are found to be significantly lower than the single-crystal bulk AlN and increase with an increasing thickness. The thermal resistance at the interface between the AlN film and the silicon substrate is found to be about 7-8x10{sup -8} m{sup 2} K/W.
- OSTI ID:
- 20662121
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature
Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering
Thermal conductivities of thin, sputtered optical films
Journal Article
·
Sun Nov 30 23:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22402397
Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering
Journal Article
·
Mon Oct 08 00:00:00 EDT 2012
· Applied Physics Letters
·
OSTI ID:22080479
Thermal conductivities of thin, sputtered optical films
Journal Article
·
Thu Dec 31 23:00:00 EST 1992
· Applied Optics; (United States)
·
OSTI ID:6949839