Mg acceptor doping of In{sub 2}O{sub 3} and overcompensation by oxygen vacancies
- Department of Materials, University of California, Santa Barbara, California 93106 (United States)
Mg-doped indium oxide (In{sub 2}O{sub 3}) thin films were grown by plasma-assisted molecular beam epitaxy with Mg-concentrations ranging from 10{sup 17} to 6 Multiplication-Sign 10{sup 20} cm{sup -3}. In this concentration range Mg was incorporated into In{sub 2}O{sub 3} without discernable impediment nor formation of secondary phases. Despite the role of Mg as acceptor, the films were n-type conductive in the as-grown state or after annealing in vacuum. For Mg-concentrations well in excess of the unintentional donor concentration annealing in oxygen resulted in semi-insulating films without detectable p-type conductivity. These results strongly suggest oxygen vacancies to act as shallow donors in In{sub 2}O{sub 3} that can overcompensate the Mg acceptors.
- OSTI ID:
- 22080422
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 101; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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