Plasma process optimization for N-type doping applications

Journal Article · Tue Nov 06 04:00:00 EST 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4766491· OSTI ID:22075734

Raj, Deven; Persing, Harold; Salimian, Siamak; Lacey, Kerry; Shu, Qin; Hu, Jeff Y; McTeer, Allen ^[1]

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1. Applied Materials, Inc., Varian Semiconductor Business Unit, 35 Dory Road, Gloucester, MA 01930 (United States)

Plasma doping (PLAD) has been adopted across the implant technology space and into high volume production for both conventional DRAM and NAND doping applications. PLAD has established itself as an alternative to traditional ion implantation by beamline implantation. The push for high doping concentration, shallow doping depth, and conformal doping capability expand the need for a PLAD solution to meet such requirements. The unique doping profile and doping characteristics at high dose rates allow for PLAD to deliver a high throughput, differentiated solution to meet the demand of evolving transistor technology. In the PLAD process, ions are accelerated to the wafer as with a negative wafer bias applied to the wafer. Competing mechanisms, such as deposition, sputtering, and etching inherent in plasma doping require unique control and process optimization. In this work, we look at the distinctive process tool control and characterization features which enable an optimized doping process using n-type (PH{sub 3} or AsH{sub 3}) chemistries. The data in this paper will draw the relationship between process optimization through plasma chemistry study to the wafer level result.

• OSTI ID: 22075734
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1496; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
ARSENIC HYDRIDES
CHEMISTRY
DEPOSITION
DOSE RATES
ETCHING
IMPLANTS
ION IMPLANTATION
OPTIMIZATION
PHOSPHORUS HYDRIDES
PLASMA
PROCESSING
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING