Optimization and Control of Plasma Doping Processes

Journal Article · Fri Jan 07 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548331· OSTI ID:21510093

Raj, Deven M; Godet, Ludovic; Chamberlain, Nicholas; Hadidi, Kamal; Singh, Vikram; Papasouliotis, George D ^[1]

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1. Varian Semiconductor Equipment Associates, 35 Dory Road, Gloucester, MA, 01930 (United States)

Plasma doping (PLAD) is a well characterized alternative to beam-line technology, which has already been adopted in high volume manufacturing in the ultra high dose, low energy regime for advanced DRAM technology nodes. As semiconductor technology evolves, the demand for ever lower energy, higher dose implants will continue to grow, and the requirements for process control will become increasingly stringent. During plasma immersion ion implantation, ionized species present in the plasma are extracted and implanted into the wafer, while other processes, such as deposition, etching and sputtering, are competing in parallel. The dopant profile into the substrate results from contributions of all these mechanisms. Using the hardware and plasma composition control features present in the PLAD system to balance the contributions of the above processes, the dopant profile can be modified and dopant retention can be optimized. In this paper, we detail the process control approach used to optimize process performance for low energy, high dose implants, and validate it with plasma and wafer state data.

• OSTI ID: 21510093
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1321; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BALANCES
BEAMS
CONTROL
DEPOSITION
DOPED MATERIALS
DOSES
ETCHING
IMPLANTS
ION IMPLANTATION
MANUFACTURING
MATERIALS
MEASURING INSTRUMENTS
OPTIMIZATION
PLASMA
PROCESS CONTROL
RADIATION DOSES
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
SURFACE FINISHING
WEIGHT INDICATORS