Modeling boron profiles in silicon after pulsed excimer laser annealing
- Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)
In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of {approx}180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measurement had to be taken into account to reproduce the measured profiles.
- OSTI ID:
- 22075707
- Journal Information:
- AIP Conference Proceedings, Vol. 1496, Issue 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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