Plasma properties of RF magnetron sputtering system using Zn target
Journal Article
·
· AIP Conference Proceedings
- Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)
In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.
- OSTI ID:
- 22069031
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1455; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Measurements of sputtered neutrals and ions and investigation of their roles on the plasma properties during rf magnetron sputtering of Zn and ZnO targets
Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target
High-Power Impulse Magnetron Sputter Deposition of Boron Carbide with Full-Face Erosion Magnetron and Mixed Ar-Ne Plasma
Journal Article
·
Thu Nov 14 23:00:00 EST 2013
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:22224104
Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target
Journal Article
·
Wed Jul 15 00:00:00 EDT 2015
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:22392193
High-Power Impulse Magnetron Sputter Deposition of Boron Carbide with Full-Face Erosion Magnetron and Mixed Ar-Ne Plasma
Journal Article
·
Sun Nov 09 19:00:00 EST 2025
· Fusion Science and Technology
·
OSTI ID:3016226