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U.S. Department of Energy
Office of Scientific and Technical Information

Novel MCM interconnection analysis using Capacitive Charge Generation (CCG)

Conference ·
OSTI ID:220599

A new SEM technique, Capacitive Charge Generation (CCG), has been developed to rapidly image MCM interconnection continuity. The new technique uses low primary electron beam energies (< 2.0 keV), very high beam currents (>100 nA), and fast electron beam scan rates (>5 frames/second) to probe buried conductors in MCMS. For these conditions, new surface charging effects have been observed that enable examination of conductors under thick insulating layers. CCG has been applied to conductors covered by over 90 {mu}m of polymer dielectric. The physics of CCG signal generation and applications for MCM failure analysis are described.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
220599
Report Number(s):
SAND--95-2255C; CONF-960429--1; ON: DE96006997
Country of Publication:
United States
Language:
English