Plasma enhanced atomic layer deposition of SiN{sub x}:H and SiO{sub 2}

Journal Article · Fri Jul 15 04:00:00 EDT 2011 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3584790· OSTI ID:22054104

King, Sean W ^[1]

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1. Intel Corporation, Logic Technology Development, 5200 NE Elam Young Parkway, Hillsboro, Oregon 97124 (United States)

As the nanoelectronics industry looks to transition to both three dimensional transistor and interconnect technologies at the <22 nm node, highly conformal dielectric coatings with precise thickness control are increasingly being demanded. Plasma enhanced chemical vapor deposition (PECVD) currently fills this role for most applications requiring low temperature processing but does not always meet step coverage and thickness precision requirements. The authors present results for a hybrid technique, plasma enhanced atomic layer deposition (PEALD), which utilizes typical PECVD process gases and tooling while delivering improved topography coverage and thickness control. Specifically, the authors show that alternating SiH{sub 4} gas/N{sub 2} plasma exposures applied in an atomic layer deposition sequence can be used to deposit SiN{sub x}:H films in a self-limiting fashion with improved conformality and superior performance as a moisture barrier. PEALD of SiO{sub 2} using alternating SiH{sub 4} and CO{sub 2} plasma exposures is further demonstrated.

• OSTI ID: 22054104
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 4 Vol. 29; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACCURACY
CARBON DIOXIDE
CHEMICAL VAPOR DEPOSITION
DIELECTRIC MATERIALS
PLASMA
PROTECTIVE COATINGS
SILANES
SILICON OXIDES
TEMPERATURE RANGE 0065-0273 K
THICKNESS
THIN FILMS
TOPOGRAPHY
TRANSISTORS