Gallium ion extraction from a plasma sputter-type ion source

Journal Article · Mon Feb 15 00:00:00 EST 2010 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3292933· OSTI ID:22053902

Vasquez, M Jr; Imakita, S; Kasuya, T; Wada, M ^[1]; Maeno, S ^[2]

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1. Graduate School of Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)
2. Novelion Systems, Co. Ltd., Kyotanabe, Kyoto 610-0332 (Japan)

A broad mixed ion beam containing positive ions of gallium (Ga) was produced with a plasma sputter-type ion source. Liquid Ga was suspended on a tungsten reservoir to be sputtered and postionized in argon (Ar) plasma excited by a radio frequency (rf) power at 13.56 MHz. Optical emission spectra from the plasma near the Ga sputtering target had indicated that the release of Ga into plasma increased with increasing negative bias to the sputtering target. The ratio of Ga{sup +} current to Ar{sup +} current was measured to be about 1% with a quadrupole mass analyzer at 100 V extraction voltage for incident rf power as low as 30 W. Ions in the plasma were extracted through a pair of multiaperture electrodes. The homogeneity of Ga flux was examined by making a Ga deposition pattern on a glass substrate located behind the extractor electrodes.

• OSTI ID: 22053902
• Journal Information: Review of Scientific Instruments, Vol. 81, Issue 2; Conference: ICIS 2009: 13. international conference on ion sources, Gatlinburg, TN (United States), 20-25 Sep 2009; Other Information: (c) 2010 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARGON
ARGON IONS
BEAM CURRENTS
CATIONS
DEPOSITION
ELECTRIC POTENTIAL
ELECTRODES
EMISSION SPECTRA
EXTRACTION
GALLIUM
GALLIUM IONS
GLASS
ION BEAMS
ION SOURCES
MASS SPECTRA
MHZ RANGE
RADIOWAVE RADIATION
SPUTTERING
TUNGSTEN