Radio frequency ion source operated with field effect transistor based radio frequency system

Journal Article · Mon Feb 15 00:00:00 EST 2010 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3279306· OSTI ID:22053863

Ando, A; Komuro, A; Matsuno, T ^[1]; Tsumori, K; Takeiri, Y ^[2]

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1. Department of Electrical Engineering, Tohoku University, Sendai 980-8759 (Japan)
2. National Institute for Fusion Science, Toki 509-5292 (Japan)

Characteristics of radio frequency (RF) plasma production are investigated using a field effect transistor inverter power supply as an RF wave source. With the frequency of around 0.3 MHz, an electron density over 10{sup 18} m{sup -3} is produced in argon plasma. Although lower densities are obtained in hydrogen plasma, it drastically increased up to 5x10{sup 18} m{sup -3} with an axial magnetic field of around 100 G applied in the driver region. Effects of the magnetic field and gas pressure are investigated in the RF produced plasma with the frequency of several hundred kilohertz.

• OSTI ID: 22053863
• Journal Information: Review of Scientific Instruments, Vol. 81, Issue 2; Conference: ICIS 2009: 13. international conference on ion sources, Gatlinburg, TN (United States), 20-25 Sep 2009; Other Information: (c) 2010 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ARGON
ELECTRON DENSITY
FIELD EFFECT TRANSISTORS
HYDROGEN
INVERTERS
ION SOURCES
MAGNETIC FIELDS
MHZ RANGE
PLASMA PRODUCTION
POWER SUPPLIES
RADIOWAVE RADIATION
RF SYSTEMS