Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy

Journal Article · Thu Jul 15 00:00:00 EDT 2010 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3430562· OSTI ID:22053729

Miotti, Leonardo; Bastos, Karen P; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis ^[1]

---

1. Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States)

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

• OSTI ID: 22053729
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 4; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ABSORPTION SPECTROSCOPY
ANNEALING
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
GERMANIUM
HAFNIUM OXIDES
PLASMA
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
TETRAGONAL LATTICES
THIN FILMS
X-RAY SPECTROSCOPY