Growth, electrical, and optical properties of nanocrystalline VO{sub 2} (011) thin films prepared by thermal oxidation of magnetron sputtered vanadium films
- School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)
Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were prepared on glass substrates at different deposition temperatures by oxidizing sputtered vanadium films. Atomic force microscope, x-ray diffraction, and Raman scattering were employed to characterize the films. It was confirmed that low deposition temperature resulted in improving oxygen atom diffusion and VO{sub 2} nanograin growth in the thermal oxidation process. Investigation of the electrical properties revealed that the amplitude of semiconductor-metal transition and transition temperature decreased, whereas the Hall mobility and carrier concentration increased as the deposition temperature elevated. Optical investigations were carried out in the ultraviolet-visible-near-infrared region. Narrow optical band gaps were observed in these films.
- OSTI ID:
- 22053725
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 4; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC CONDUCTIVITY
GRAIN GROWTH
MAGNETRONS
NANOSTRUCTURES
NEAR INFRARED RADIATION
OPTICAL PROPERTIES
RAMAN EFFECT
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
THIN FILMS
TRANSITION TEMPERATURE
ULTRAVIOLET RADIATION
ULTRAVIOLET SPECTRA
VANADIUM OXIDES
VISIBLE SPECTRA
X-RAY DIFFRACTION