High rate sputtering deposition of silicon oxide thin films from new SiO{sub 2}:Si target composition

Journal Article · Wed Jul 15 04:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3071962· OSTI ID:22053519

Qihua, Fan; Liqin, Zhou; Stevenson, David ^[1]

---

1. Wintek Electro-Optics Corp, 1665 Highland Dr., Ann Arbor, Michigan 48108 (United States)

The authors have developed an electrically conductive sputtering target by a sintering process using powders of SiO{sub 2} and boron doped Si. This target composition can be sputtered using dc, pulse dc, or rf power supplies. Using rf sputtering the authors have demonstrated deposition rates that are four times higher than typical deposition rates for rf sputtered SiO{sub 2} films from quartz targets. Further, the optical transmittance, refractive index, microstructure, and etching resistance of the SiO{sub 2} films prepared using this target are comparable to films produced from rf sputtered quartz targets. In this article, the authors present details of the conductive SiO{sub 2}:Si target composition as well as the resulting SiO{sub 2} film properties and deposition rates that have been achieved. They also discuss the possible mechanisms for such high deposition rates.

• OSTI ID: 22053519
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 4 Vol. 27; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
CRYSTAL GROWTH
DEPOSITION
DOPED MATERIALS
ETCHING
MICROSTRUCTURE
POWDERS
PULSES
QUARTZ
REFRACTIVE INDEX
SILICON
SILICON OXIDES
SINTERING
SPUTTERING
THIN FILMS