Structural and morphological evolution of gallium nitride nanorods grown by chemical beam epitaxy

Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3117248· OSTI ID:22053500

Kuo, Shou-Yi; Lai, Fang-I; Chen, Wei-Chun; Hsiao, Chien-Nan; Lin, Woei-Tyng ^[1]

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1. Department of Electronic Engineering, Chang Gung University, Taiwan, Green Technology Research Center, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China)

The morphological and structural evolution is presented for GaN nanorods grown by chemical beam epitaxy on (0001) Al{sub 2}O{sub 3} substrates. Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and temperature-dependent photoluminescence measurements. While increasing the growth temperature and the flow rate of radio-frequency nitrogen radical, the three-dimensional growth mode will be enhanced to form one-dimensional nanostructures. The high density of well-aligned nanorods with a diameter of 30-50 nm formed uniformly over the entire sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the self-assembled GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. Particularly, the ''S-shape'' behavior with localization of {approx}10 meV observed in the temperature-dependent photoluminescence might be ascribed to the fluctuation in crystallographic defects and composition.

• OSTI ID: 22053500
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 4; Other Information: (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
EPITAXY
FLUCTUATIONS
GALLIUM NITRIDES
MONOCRYSTALS
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEXTURE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION