Melt nonstoichiometry and defect structure of ZnGeP{sub 2} crystals
Journal Article
·
· Crystallography Reports
- Russian Academy of Sciences, Institute of Monitoring of Climatic and Ecological Systems, Siberian Branch (Russian Federation)
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
- Novgorod State University (Russian Federation)
- Russian Academy of Sciences, Institute of High-Current Electronics, Siberian Branch (Russian Federation)
- Groupe d'Etude de la Matiere Condensee (GEMaC) UMR 8635 CNRS-Universite de Versailles-Saint Quentin (France)
The defect structure of ZnGeP{sub 2} crystals grown from a melt by the vertical Bridgman method has been investigated. A deviation of the melt composition from stoichiometric leads to the formation of striations and the inclusions of other phases which are observed as structures (chains) oriented parallel to the growth axis. According to the microanalysis data, the inclusion composition corresponds to a mixture of ZnGeP{sub 2}, Zn{sub 3}P{sub 2}, and Ge. Nanoinclusions of germanium phosphide are detected by transmission electron microscopy. X-ray topography reveals defects of four types. The main defects in the central part of an ingot are related to the composition fluctuations, and the newly formed dislocations are basically single ones. Most dislocations are formed at the crystal periphery.
- OSTI ID:
- 22051242
- Journal Information:
- Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 1 Vol. 55; ISSN 1063-7745; ISSN CYSTE3
- Country of Publication:
- United States
- Language:
- English
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