{beta}-Ga{sub 2}O{sub 3} growth by plasma-assisted molecular beam epitaxy

Journal Article · Mon Mar 15 00:00:00 EDT 2010 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3294715· OSTI ID:22051148

Tsai, Min-Ying; Bierwagen, Oliver; White, Mark E; Speck, James S ^[1]

---

1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

The authors demonstrate the heteroepitaxial and homoepitaxial growth of single crystalline {beta}-Ga{sub 2}O{sub 3} by plasma-assisted molecular beam epitaxy. Phase-pure (201) and (100) {beta}-Ga{sub 2}O{sub 3} thin films were grown on c-plane sapphire and (100) {beta}-Ga{sub 2}O{sub 3} substrates, respectively. Based on the homoepitaxial results, detailed information is reported on the dependence between the {beta}-Ga{sub 2}O{sub 3} film quality and various growth parameters. At an optimized growth temperature of 700 deg. C, a growth relationship between growth rates and increasing gallium fluxes was established at a fixed oxygen pressure. A three-dimensional columnar growth with a relatively high growth rate was measured at a low gallium flux while a terrace surface morphology with a reduced growth rate was observed as the gallium flux increased. The gallium flux played an important role on both surface morphology and growth rate. We associated the decreasing growth rate with increasing gallium flux with the formation of gallium suboxides monitored by quadrupole mass spectrometry. The formation and desorption of volatile gallium suboxides limited the resulting growth rate of {beta}-Ga{sub 2}O{sub 3} growth.

• OSTI ID: 22051148
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 2; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
DESORPTION
GALLIUM
GALLIUM OXIDES
LAYERS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
MORPHOLOGY
OXYGEN
PLASMA
SAPPHIRE
SUBSTRATES
SURFACE COATING
THIN FILMS
THREE-DIMENSIONAL CALCULATIONS
VOLATILITY