High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system
Journal Article
·
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
- Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558 (Japan)
Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 deg. C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O{sub 2} flow ratio including ''the transition region''. The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8x10{sup -4} {Omega} cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 deg. C with a discharge power of 4 kW.
- OSTI ID:
- 22051137
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 4 Vol. 28; ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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