Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge

Journal Article · Thu Dec 15 00:00:00 EST 2011 · Plasma Physics Reports

DOI:https://doi.org/10.1134/S1063780X11120014· OSTI ID:22047445

Burdovitsin, V A; Oks, E M ^[1]

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1. Tomsk State University of Control Systems and Radioelectronics (Russian Federation)

The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current flowing through the anodized specimen did not exceed 1.5 mA/cm{sup 2}, and its temperature was 200-250 Degree-Sign C. Continuous Al{sub 2}O{sub 3} and SiO{sub 2} films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150-200 nm/h for Al{sub 2}O{sub 3} and 400-800 nm/h for SiO{sub 2}.

• OSTI ID: 22047445
• Journal Information: Plasma Physics Reports, Vol. 37, Issue 13; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-780X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ALUMINIUM
ALUMINIUM OXIDES
ANODIZATION
ELECTRIC CURRENTS
ELECTRON BEAMS
GLOW DISCHARGES
HOLLOW CATHODES
LAYERS
OXYGEN
PLASMA
PLASMA DENSITY
SILICON
SILICON OXIDES
SURFACES