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March 2018 |
Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In 2 Se 3 thin layers
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January 2018 |
Resonance Raman scattering study on exciton and polaron anisotropies in InSe
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May 1980 |
Highly crystalline 2D superconductors
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December 2016 |
Desorption characteristics of selenium and tellurium thin films
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September 2022 |
Reflection high-energy electron diffraction pattern calculations for Si(111)-7×7 surface
- Wu, Z. -C.; Schowalter, L. J.
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Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, Vol. 6, Issue 4
https://doi.org/10.1116/1.584240
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July 1988 |
Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications
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March 2022 |
Rapid Method for Determining Ternary‐Alloy Phase Diagrams
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December 1965 |
Recent Progress in Two‐Dimensional Ferroelectric Materials
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November 2019 |
Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
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June 2009 |
Gate Tuning of High‐Performance InSe‐Based Photodetectors Using Graphene Electrodes
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June 2015 |
Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
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August 2013 |
Epitaxial growth of γ -InSe and α , β , and γ -In 2 Se 3 on ε -GaSe
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June 2018 |
Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
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July 2016 |
Wafer-scale growth of VO2 thin films using a combinatorial approach
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October 2015 |
High-Vacuum Growth and Processing Systems
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January 1996 |
Tunneling Images of Atomic Steps on the Si(111)7×7 Surface
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November 1985 |
Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition
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August 2018 |
In-Se (indium-selenium)
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April 2004 |
InSe on 3 inch Si(111) wafer-scale synthesis with combinatorial growth approach by MBE
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January 2023 |
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
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June 2010 |
First-principles studies of the three-dimensional strong topological insulators Bi 2 Te 3 , Bi 2 Se 3 and Sb 2 Te 3
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June 2010 |
Fundamentals of two-step etching techniques for ideal silicon-hydrogen termination of silicon(111)
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October 1994 |
Intrinsic Electron Mobility Exceeding 10 3 cm 2 /(V s) in Multilayer InSe FETs
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May 2015 |
Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap
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April 2016 |
Scherrer after sixty years: A survey and some new results in the determination of crystallite size
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April 1978 |
Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas
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June 2021 |
Sticking coefficients of selenium and tellurium
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March 2021 |
High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
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April 2014 |
Evidence for two-dimensional Ising superconductivity in gated MoS2
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November 2015 |
Spiral Growth without Dislocations: Molecular Beam Epitaxy of the Topological Insulator on Epitaxial Graphene/SiC(0001)
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March 2012 |
Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)-(1×1) surfaces
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June 1994 |
Thickness-dependent transition of the valence band shape from parabolic to Mexican-hat-like in the MBE grown InSe ultrathin films
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May 2018 |
Colloquium: Topological insulators
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November 2010 |
Atomically smooth ultrathin films of topological insulator Sb2Te3
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November 2010 |
Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)-(7×7)
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 4
https://doi.org/10.1116/1.576159
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July 1989 |
Vibrational characterization and electronic properties of long range-ordered, ideally hydrogen-terminated Si(111)
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January 1995 |
Calculation of surface energy and simulation of reconstruction for Si(111) 3×3, 5×5, 7×7, and 9×9 DAS structure
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October 1999 |
An Investigation of the Si(111) 7×7 Surface Structure by RHEED
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July 1980 |
Synthesis and electronic properties of InSe bi-layer on Si(111)
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February 2021 |
Si(111)-7×7 surface: Energy-minimization calculation for the dimer–adatom–stacking-fault model
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January 1987 |
Dislocation driven spiral and non-spiral growth in layered chalcogenides
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January 2018 |
Large-area optoelectronic-grade InSe thin films via controlled phase evolution
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December 2020 |
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In 2 Se 3
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January 2018 |
High-quality monolayer superconductor NbSe2 grown by chemical vapour deposition
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August 2017 |
Phase-Engineered Growth of Ultrathin InSe Flakes by Chemical Vapor Deposition for High-Efficiency Second Harmonic Generation
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September 2018 |
Electronic origin of high-temperature superconductivity in single-layer FeSe superconductor
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January 2012 |
Ab initio total-energy calculations for extremely large systems: Application to the Takayanagi reconstruction of Si(111)
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March 1992 |
Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse
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March 2017 |
Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe
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January 2014 |
Chemical Etching of Screw Dislocated Transition Metal Dichalcogenides
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September 2021 |
Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
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July 2022 |
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
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November 2016 |