Solution‐Based Processing of Optoelectronically Active Indium Selenide

Kang, Joohoon; Wells, Spencer A.; Sangwan, Vinod K.; Lam, David; Liu, Xiaolong; Luxa, Jan; Sofer, Zdeněk; Hersam, Mark C.

doi:10.1002/adma.201802990

Title: Solution‐Based Processing of Optoelectronically Active Indium Selenide

Journal Article · Fri Aug 10 00:00:00 EDT 2018 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201802990· OSTI ID:1463920

Kang, Joohoon ^[1]; Wells, Spencer A. ^[1]; Sangwan, Vinod K. ^[1]; Lam, David ^[1]; Liu, Xiaolong ^[2]; Luxa, Jan ^[3]; Sofer, Zdeněk ^[3];

^[4]

Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA
Applied Physics Graduate Program Northwestern University Evanston IL 60208 USA
Department of Inorganic Chemistry University of Chemistry and Technology Prague Technicka 5, 166 28 Prague 6 Czech Republic
Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA, Applied Physics Graduate Program Northwestern University Evanston IL 60208 USA, Department of Chemistry Electrical Engineering and Computer Science Northwestern University Evanston IL 60208 USA

Abstract Layered indium selenide (InSe) presents unique properties for high‐performance electronic and optoelectronic device applications. However, efforts to process InSe using traditional liquid phase exfoliation methods based on surfactant‐assisted aqueous dispersions or organic solvents with high boiling points compromise electronic properties due to residual surface contamination and chemical degradation. Here, these limitations are overcome by utilizing a surfactant‐free, low boiling point, deoxygenated cosolvent system. The resulting InSe flakes and thin films possess minimal processing residues and are structurally and chemically pristine. When employed in photodetectors, individual InSe nanosheets exhibit a maximum photoresponsivity of ≈5 × 10 ⁷ A W ⁻¹ , which is the highest value of any solution‐processed monolithic semiconductor to date. Furthermore, the surfactant‐free cosolvent system not only stabilizes InSe dispersions but is also amenable to the assembly of electronically percolating InSe flake arrays without posttreatment, which enables the realization of ultrahigh performance thin‐film photodetectors. This surfactant‐free, deoxygenated cosolvent approach can be generalized to other layered materials, thereby presenting additional opportunities for solution‐processed thin‐film electronic and optoelectronic technologies.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐SC0001059

OSTI ID:: 1463920

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Vol. 30 Journal Issue: 38; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 63 works

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