Solution-Processed Layered Gallium Telluride Thin-Film Photodetectors

Kang, Joohoon; Sangwan, Vinod K.; Lee, Hong-Sub; Liu, Xiaolong; Hersam, Mark C.

doi:10.1021/acsphotonics.8b01066

Solution-Processed Layered Gallium Telluride Thin-Film Photodetectors

Journal Article · Tue Sep 25 00:00:00 EDT 2018 · ACS Photonics

DOI:https://doi.org/10.1021/acsphotonics.8b01066· OSTI ID:1566582

^[1]; ^[1]; Lee, Hong-Sub ^[1]; ^[2]; ^[3]

Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
Northwestern Univ., Evanston, IL (United States). Graduate Program in Applied Physics
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering; Northwestern Univ., Evanston, IL (United States). Graduate Program in Applied Physics; Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Northwestern Univ., Evanston, IL (United States). Dept. of Electrical Engineering and Computer Science

Using scalable solution processing, layered gallium telluride (GaTe) nanoflake dispersions are produced in surfactant-free, low-boiling-point, water–ethanol cosolvent mixtures. During exfoliation, chemical degradation of the ambient-reactive GaTe crystals is minimized by using deoxygenated solvents in a sealed tip ultrasonication system. The structural and chemical integrity of the solution-processed GaTe nanoflakes is subsequently confirmed with a comprehensive suite of microscopic and spectroscopic analyses. Furthermore, field-effect transistors and phototransistors based on individual solution-processed GaTe nanoflakes show electronic and optoelectronic properties, respectively, that are comparable to micromechanically exfoliated GaTe. Minimal solution-processing residues from the surfactant-free, low-boiling-point cosolvent dispersion medium coupled with the high intrinsic hole doping of GaTe produces the highest electrical conductivity among solution-processed layered nanoflake thin films without post-treatment. Large-area photodetectors based on these electrically percolating thin films of solution-processed GaTe nanoflakes show a positive correlation between responsivity and illumination intensity, with a high photoconversion gain that is explained by a combination of defect-mediated optical processes and photothermal effects. Finally, overall, this study establishes solution-processed layered GaTe nanoflakes as a leading candidate for high-performance, large-area, thin-film photodetectors.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Light Energy Activated Redox Processes (LEAP); Northwestern Univ., Evanston, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0001059

OSTI ID:: 1566582

Journal Information:: ACS Photonics, Journal Name: ACS Photonics Journal Issue: 10 Vol. 5; ISSN 2330-4022

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (42)

Inkjet Printing of MoS ₂ Li, Jiantong; Naiini, Maziar M.; Vaziri, Sam Advanced Functional Materials, Vol. 24, Issue 41 https://doi.org/10.1002/adfm.201400984	journal	August 2014
High-Performance Flexible Broadband Photodetector Based on Organolead Halide Perovskite Hu, Xin; Zhang, Xiaodong; Liang, Lin Advanced Functional Materials, Vol. 24, Issue 46 https://doi.org/10.1002/adfm.201402020	journal	September 2014
High Responsivity Phototransistors Based on Few-Layer ReS ₂ for Weak Signal Detection Liu, Erfu; Long, Mingsheng; Zeng, Junwen Advanced Functional Materials, Vol. 26, Issue 12 https://doi.org/10.1002/adfm.201504408	journal	February 2016
Long‐Term Structural Evolution of an Intercalated Layered Semiconductor Chew, Annabel R.; Fonseca, Jose J.; Dubon, Oscar D. Advanced Functional Materials, Vol. 27, Issue 14 https://doi.org/10.1002/adfm.201605038	journal	March 2017
High-Gain Phototransistors Based on a CVD MoS ₂ Monolayer Zhang, Wenjing; Huang, Jing-Kai; Chen, Chang-Hsiao Advanced Materials, Vol. 25, Issue 25 https://doi.org/10.1002/adma.201301244	journal	May 2013
Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air Fonseca, Jose J.; Tongay, Sefaattin; Topsakal, Mehmet Advanced Materials, Vol. 28, Issue 30 https://doi.org/10.1002/adma.201601151	journal	May 2016
Solution-Based Processing of Optoelectronically Active Indium Selenide Kang, Joohoon; Wells, Spencer A.; Sangwan, Vinod K. Advanced Materials, Vol. 30, Issue 38 https://doi.org/10.1002/adma.201802990	journal	August 2018
Fullerene Photodetectors with a Linear Dynamic Range of 90 dB Enabled by a Cross-Linkable Buffer Layer Guo, Fawen; Xiao, Zhengguo; Huang, Jinsong Advanced Optical Materials, Vol. 1, Issue 4 https://doi.org/10.1002/adom.201200071	journal	February 2013
A Mixed-Solvent Strategy for Efficient Exfoliation of Inorganic Graphene Analogues Zhou, Kai-Ge; Mao, Nan-Nan; Wang, Hang-Xing Angewandte Chemie International Edition, Vol. 50, Issue 46 https://doi.org/10.1002/anie.201105364	journal	September 2011
XPS study of InTe and GaTe single crystals oxidation Balitskii, O. A.; Jaegermann, W. Materials Chemistry and Physics, Vol. 97, Issue 1 https://doi.org/10.1016/j.matchemphys.2005.07.055	journal	May 2006
Solution-Based Processing of Monodisperse Two-Dimensional Nanomaterials Kang, Joohoon; Sangwan, Vinod K.; Wood, Joshua D. Accounts of Chemical Research, Vol. 50, Issue 4 https://doi.org/10.1021/acs.accounts.6b00643	journal	February 2017
Ultraefficient Ultraviolet and Visible Light Sensing and Ohmic Contacts in High-Mobility InSe Nanoflake Photodetectors Fabricated by the Focused Ion Beam Technique Yang, Hung-Wei; Hsieh, Ho-Feng; Chen, Ruei-San ACS Applied Materials & Interfaces, Vol. 10, Issue 6 https://doi.org/10.1021/acsami.7b15106	journal	January 2018
Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus Kang, Joohoon; Wood, Joshua D.; Wells, Spencer A. ACS Nano, Vol. 9, Issue 4 https://doi.org/10.1021/acsnano.5b01143	journal	February 2015
In-Plane Optical Anisotropy of Layered Gallium Telluride Huang, Shengxi; Tatsumi, Yuki; Ling, Xi ACS Nano, Vol. 10, Issue 9 https://doi.org/10.1021/acsnano.6b05002	journal	August 2016
Near-Infrared Photodetector Based on MoS ₂ /Black Phosphorus Heterojunction Ye, Lei; Li, Hao; Chen, Zefeng ACS Photonics, Vol. 3, Issue 4 https://doi.org/10.1021/acsphotonics.6b00079	journal	March 2016
Self-Assembled Layer (SAL)-Based Doping on Black Phosphorus (BP) Transistor and Photodetector Kang, Dong-Ho; Jeon, Min Hwan; Jang, Sung Kyu ACS Photonics, Vol. 4, Issue 7 https://doi.org/10.1021/acsphotonics.7b00398	journal	June 2017
Surface Oxidation Doping to Enhance Photogenerated Carrier Separation Efficiency for Ultrahigh Gain Indium Selenide Photodetector Chang, Yih-Ren; Ho, Po-Hsun; Wen, Cheng-Yen ACS Photonics, Vol. 4, Issue 11 https://doi.org/10.1021/acsphotonics.7b01030	journal	October 2017
Atomic Layer GaSe/MoS ₂ van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic Range Islam, Arnob; Lee, Jaesung; Feng, Philip X. -L. ACS Photonics, Vol. 5, Issue 7 https://doi.org/10.1021/acsphotonics.8b00318	journal	December 2017
Extraordinary Photoresponse in Two-Dimensional In ₂ Se ₃ Nanosheets Jacobs-Gedrim, Robin B.; Shanmugam, Mariyappan; Jain, Nikhil ACS Nano, Vol. 8, Issue 1 https://doi.org/10.1021/nn405037s	journal	December 2013
High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes Liu, Fucai; Shimotani, Hidekazu; Shang, Hui ACS Nano, Vol. 8, Issue 1 https://doi.org/10.1021/nn4054039	journal	December 2013
Thickness sorting of two-dimensional transition metal dichalcogenides via copolymer-assisted density gradient ultracentrifugation Kang, Joohoon; Seo, Jung-Woo T.; Alducin, Diego Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms6478	journal	November 2014
Liquid exfoliation of solvent-stabilized few-layer black phosphorus for applications beyond electronics Hanlon, Damien; Backes, Claudia; Doherty, Evie Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9563	journal	October 2015
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Ultrasensitive photodetectors based on monolayer MoS2 Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin Nature Nanotechnology, Vol. 8, Issue 7 https://doi.org/10.1038/nnano.2013.100	journal	June 2013
Atomically thin p–n junctions with van der Waals heterointerfaces Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M. Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.150	journal	August 2014
Black phosphorus field-effect transistors Li, Likai; Yu, Yijun; Ye, Guo Jun Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.35	journal	March 2014
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L. Nature Nanotechnology, Vol. 12, Issue 3 https://doi.org/10.1038/nnano.2016.242	journal	November 2016
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures McManus, Daryl; Vranic, Sandra; Withers, Freddie Nature Nanotechnology, Vol. 12, Issue 4 https://doi.org/10.1038/nnano.2016.281	journal	January 2017
Black phosphorus ink formulation for inkjet printing of optoelectronics and photonics Hu, Guohua; Albrow-Owen, Tom; Jin, Xinxin Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00358-1	journal	August 2017
Inkjet deposition of liquid-exfoliated graphene and MoS ₂ nanosheets for printed device applications Finn, David J.; Lotya, Mustafa; Cunningham, Graeme J. Mater. Chem. C, Vol. 2, Issue 5 https://doi.org/10.1039/C3TC31993H	journal	January 2014
Large variations in both dark- and photoconductivity in nanosheet networks as nanomaterial is varied from MoS ₂ to WTe ₂ Cunningham, Graeme; Hanlon, Damien; McEvoy, Niall Nanoscale, Vol. 7, Issue 1 https://doi.org/10.1039/C4NR04951A	journal	January 2015
Functional inks and printing of two-dimensional materials Hu, Guohua; Kang, Joohoon; Ng, Leonard W. T. Chemical Society Reviews, Vol. 47, Issue 9 https://doi.org/10.1039/C8CS00084K	journal	January 2018
Photoconductivity of solution-processed MoS2 films Cunningham, Graeme; Khan, Umar; Backes, Claudia Journal of Materials Chemistry C, Vol. 1, Issue 41 https://doi.org/10.1039/c3tc31402b	journal	January 2013
Band-like transport in high mobility unencapsulated single-layer MoS ₂ transistors Jariwala, Deep; Sangwan, Vinod K.; Late, Dattatray J. Applied Physics Letters, Vol. 102, Issue 17 https://doi.org/10.1063/1.4803920	journal	April 2013
Stable aqueous dispersions of optically and electronically active phosphorene Kang, Joohoon; Wells, Spencer A.; Wood, Joshua D. Proceedings of the National Academy of Sciences, Vol. 113, Issue 42 https://doi.org/10.1073/pnas.1602215113	journal	April 2016
Electronic band structure of GaSe(0001): Angle-resolved photoemission and ab initio theory Plucinski, L.; Johnson, R. L.; Kowalski, B. J. Physical Review B, Vol. 68, Issue 12 https://doi.org/10.1103/PhysRevB.68.125304	journal	September 2003
Bolometric Infrared Photoresponse of Suspended Single-Walled Carbon Nanotube Films Itkis, M. E.; Borondics, F.; Yu, A. Science, Vol. 312, Issue 5772 https://doi.org/10.1126/science.1125695	journal	April 2006
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials Coleman, J. N.; Lotya, M.; O'Neill, A. Science, Vol. 331, Issue 6017, p. 568-571 https://doi.org/10.1126/science.1194975	journal	February 2011
Liquid Exfoliation of Layered Materials Nicolosi, V.; Chhowalla, M.; Kanatzidis, M. G. Science, Vol. 340, Issue 6139, p. 1226419 https://doi.org/10.1126/science.1226419	journal	June 2013
All-printed thin-film transistors from networks of liquid-exfoliated nanosheets Kelly, Adam G.; Hallam, Toby; Backes, Claudia Science, Vol. 356, Issue 6333 https://doi.org/10.1126/science.aal4062	journal	April 2017
Electronic Transport in Two-Dimensional Materials Sangwan, Vinod K.; Hersam, Mark C. Annual Review of Physical Chemistry, Vol. 69, Issue 1 https://doi.org/10.1146/annurev-physchem-050317-021353	journal	April 2018

Cited By (3)

In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects Zhao, Siwen; Dong, Baojuan; Wang, Huide Nanoscale Advances, Vol. 2, Issue 1 https://doi.org/10.1039/c9na00623k	journal	January 2020
Electronics from solution-processed 2D semiconductors Gao, Xiangxiang; Bian, Gang; Zhu, Jian Journal of Materials Chemistry C, Vol. 7, Issue 41 https://doi.org/10.1039/c9tc03935j	journal	January 2019
Synthesis and emerging properties of 2D layered III–VI metal chalcogenides Cai, Hui; Gu, Yiyi; Lin, Yu-Chuan Applied Physics Reviews, Vol. 6, Issue 4 https://doi.org/10.1063/1.5123487	journal	December 2019

Similar Records

Solution‐Based Processing of Optoelectronically Active Indium Selenide

Journal Article · Thu Aug 09 20:00:00 EDT 2018 · Advanced Materials · OSTI ID:1463920

Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates

Journal Article · Mon Feb 24 19:00:00 EST 2025 · ACS Applied Materials and Interfaces · OSTI ID:2524041

Related Subjects

47 OTHER INSTRUMENTATION
anhydrous
bio-inspired
catalysis (heterogeneous)
catalysis (homogeneous)
charge transport
gallium telluride
hydrogen and fuel cells
liquid phase exfoliation
magnetism and spin physics
materials and chemistry by design
mesostructured materials
optics
phonons
photodetector
photosynthesis (natural and artificial)
solar (fuels)
solar (photovoltaic)
synthesis (novel materials)
synthesis (scalable processing)
synthesis (self-assembly)
transistor
two-dimensional

Solution-Processed Layered Gallium Telluride Thin-Film Photodetectors

Citation Formats

References (42)

Cited By (3)

Similar Records

Related Subjects