IR luminescence of tellurium-doped silica-based optical fibre
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
Tellurium-doped germanosilicate fibre has been fabricated by the MCVD process. In contrast to Te-containing glasses studied earlier, it has a broad luminescence band (full width at half maximum of {approx}350 nm) centred at 1500 nm, with a lifetime of {approx}2 {mu}s. The luminescence of the fibre has been studied before and after gamma irradiation in a {sup 60}Co source to 309 and 992 kGy. The irradiation produced a luminescence band around 1100 nm, with a full width at half maximum of {approx}400 nm and lifetime of {approx}5 {mu}s. (letters)
- OSTI ID:
- 22044007
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 3 Vol. 42; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fibre laser based on tellurium-doped active fibre
Absorption and luminescence properties of Cr{sup 4+}-doped silica fibres
Optical properties of bismuth-doped silica fibres in the temperature range 300 - 1500 K
Journal Article
·
Thu Feb 27 23:00:00 EST 2014
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:22373594
Absorption and luminescence properties of Cr{sup 4+}-doped silica fibres
Journal Article
·
Thu Nov 29 23:00:00 EST 2001
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21442864
Optical properties of bismuth-doped silica fibres in the temperature range 300 - 1500 K
Journal Article
·
Sun Sep 30 00:00:00 EDT 2012
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:22066646