Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Optical properties of bismuth-doped silica fibres in the temperature range 300 - 1500 K

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi{sup 3+} profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect. (optical fibres, lasers and amplifiers. properties and applications)
OSTI ID:
22066646
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 9 Vol. 42; ISSN 1063-7818
Country of Publication:
United States
Language:
English

Similar Records

Optical properties of active bismuth centres in silica fibres containing no other dopants
Journal Article · Fri Sep 10 00:00:00 EDT 2010 · Quantum Electronics (Woodbury, N.Y.) · OSTI ID:21471325

Bismuth-doped germanosilicate fibre laser with 20-W output power at 1460 nm
Journal Article · Sun Jul 31 00:00:00 EDT 2011 · Quantum Electronics (Woodbury, N.Y.) · OSTI ID:21552652

IR luminescence in bismuth-doped germanate glasses and fibres
Journal Article · Wed Feb 27 23:00:00 EST 2013 · Quantum Electronics (Woodbury, N.Y.) · OSTI ID:22113713