Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are presented. One such system is a QD superlattice exhibiting the Wannier-Stark effect. The involvement of heavyhole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis (X-Y) and along the growth direction Z of the structure was observed. The degree of polarization anisotropy depends on the height of vertically correlated QDs and the QD superlattice: the total thickness of all In(Ga)As QD layers and GaAs spacers between the QDs, which is related to the Z component of the wave function of heavy-hole ground states for vertically correlated QDs and for the QD superlattice.
- OSTI ID:
- 22039052
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 46; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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