Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

Journal Article · Sun Apr 01 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3702776· OSTI ID:22038903

Pinto, S R. C.; Ramos, M M. D.; Gomes, M J. M. ^[1]; Buljan, M ^[2]; Chahboun, A ^[1]; Roldan, M A; Molina, S I ^[3]; Bernstorff, S ^[4]; Varela, M; Pennycook, S J ^[5]; Barradas, N P; Alves, E ^[6]

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1. University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal)
2. Ruder Boskovic Institute, Bijenicka cesta 54, Zagreb 10000 (Croatia)
3. Departamento de Ciencia de los Materiales e Ing. Metalurgica y Q. I., Universidad de Cadiz, Cadiz (Spain)
4. Sincrotrone Trieste, SS 14 km163, 5, Basovizza 34012 (Italy)
5. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
6. Instituto Superior Tecnico e Instituto Tecnologico e Nuclear-, EN10, Sacavem 2686-953 (Portugal)

In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

• OSTI ID: 22038903
• Journal Information: Journal of Applied Physics, Vol. 111, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
AMORPHOUS STATE
CRYSTAL GROWTH
DEPOSITION
GERMANIUM
INTERFACES
LAYERS
MATRIX MATERIALS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPUTTERING
SUPERLATTICES
SURFACES
THICKNESS