Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
- University of Minho, Portugal
- ORNL
- Universidad de Cadiz, Spain
- R. Boskovic Institute, Zagreb, Croatia
- Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal
- FST Tanger, Morocco
- Sincrotrone Trieste, Basovizza, Italy
In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1043311
- Journal Information:
- Journal of Applied Physics, Vol. 111, Issue 7; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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