Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals

Journal Article · Thu Dec 15 04:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3665122· OSTI ID:22038820

Wood, A W ^[1]; Collino, R R ^[2]; Cardozo, B L ^[3]; Naab, F ^[4]; Wang, Y Q ^[5]; Goldman, R S ^[1]

---

1. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
2. Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
3. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
4. Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)
5. Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, New Mexico 87545 (United States)

We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.

• OSTI ID: 22038820
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 110; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CRYSTALS
FABRICATION
GALLIUM ARSENIDES
GALLIUM IONS
GALLIUM NITRIDES
ION BEAMS
ION IMPLANTATION
IRRADIATION
MATRIX MATERIALS
NANOSTRUCTURES
NITROGEN IONS
NUCLEATION
SEMICONDUCTOR MATERIALS
THERMODYNAMICS
VACANCIES
ZINC SULFIDES