Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, New Mexico 87545 (United States)
We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.
- OSTI ID:
- 22038820
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 12; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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