Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

Warren, M. V.; Canniff, J. C.; Chi, H.; Naab, F.; Stoica, V. A.; Clarke, R.; Uher, C.; Goldman, R. S.

doi:10.1063/1.4906992

Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

Journal Article · Sat Feb 14 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4906992· OSTI ID:1370088

Warren, M. V. ^[1]; Canniff, J. C. ^[1]; ^[2]; Naab, F. ^[3]; Stoica, V. A. ^[2]; Clarke, R. ^[2]; Uher, C. ^[2]; ^[4]

Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering and Radiological Sciences
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering; Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics

We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0000957

OSTI ID:: 1370088

Alternate ID(s):: OSTI ID: 1228532

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 117; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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