skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth mechanism of ZnO low-temperature homoepitaxy

Abstract

The authors report on the growth mechanism of ZnO homoepitaxy at the low-temperature range of 500 deg. C, which is unavailable to obtain high-quality ZnO films in heteroepitaxy. One typical set of ZnO films were grown on (0001) ZnO substrates by molecular-beam epitaxy: a standard structure without buffer and two buffered structures with high-temperature (HT) homobuffer and low-temperature (LT) homobuffer. As a result, the LT homobuffered structure had the outstanding material properties: the surface roughness is 0.9 nm, the full width at half maximum of x-ray rocking curve is 13 arcsec, and the emission linewidth of donor-bound excitons is 2.4 meV. In terms of the theoretical interpretation of the experimentally obtained electron mobilities, it was found that the LT homobuffered structure suffers less from the dislocation scattering and the ionized-impurity scattering compared to the HT homobuffered structure. It is proposed that, in the ZnO low-temperature homoepitaxy, the LT homobuffer plays a key role in inducing the complete termination of dislocations in the homointerface and suppressing the outdiffusion of contaminants and point defects on the ZnO surface, which results in the formation of smooth wetting layer on the homointerface.

Authors:
; ; ; ;  [1];  [2];  [3]
  1. Center for Interdisciplinary Research, Tohoku University, Aoba 6-3, Aramaki, Aobak-ku, Sendai 980-8578 (Japan)
  2. Center for Optoelectronic Materials and Devices, Department of Defense Science and Technology, Hoseo University, 165 Sechul-ri, Baebang-eup, Asan 336-795 (Korea, Republic of)
  3. Photonics Device Team, Korea Photonics Technology Institute, 971-35 Wolchul-dong, Buk-gu, Gwangju, 500-779 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22038690
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 5; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DIFFUSION; DISLOCATIONS; ELECTRON MOBILITY; EXCITONS; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; ROUGHNESS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Park, S H, Minegishi, T, Lee, H J, Chang, J H, Yao, T, Oh, D C, and Ko, H J. Growth mechanism of ZnO low-temperature homoepitaxy. United States: N. p., 2011. Web. doi:10.1063/1.3630030.
Park, S H, Minegishi, T, Lee, H J, Chang, J H, Yao, T, Oh, D C, & Ko, H J. Growth mechanism of ZnO low-temperature homoepitaxy. United States. https://doi.org/10.1063/1.3630030
Park, S H, Minegishi, T, Lee, H J, Chang, J H, Yao, T, Oh, D C, and Ko, H J. Thu . "Growth mechanism of ZnO low-temperature homoepitaxy". United States. https://doi.org/10.1063/1.3630030.
@article{osti_22038690,
title = {Growth mechanism of ZnO low-temperature homoepitaxy},
author = {Park, S H and Minegishi, T and Lee, H J and Chang, J H and Yao, T and Oh, D C and Ko, H J},
abstractNote = {The authors report on the growth mechanism of ZnO homoepitaxy at the low-temperature range of 500 deg. C, which is unavailable to obtain high-quality ZnO films in heteroepitaxy. One typical set of ZnO films were grown on (0001) ZnO substrates by molecular-beam epitaxy: a standard structure without buffer and two buffered structures with high-temperature (HT) homobuffer and low-temperature (LT) homobuffer. As a result, the LT homobuffered structure had the outstanding material properties: the surface roughness is 0.9 nm, the full width at half maximum of x-ray rocking curve is 13 arcsec, and the emission linewidth of donor-bound excitons is 2.4 meV. In terms of the theoretical interpretation of the experimentally obtained electron mobilities, it was found that the LT homobuffered structure suffers less from the dislocation scattering and the ionized-impurity scattering compared to the HT homobuffered structure. It is proposed that, in the ZnO low-temperature homoepitaxy, the LT homobuffer plays a key role in inducing the complete termination of dislocations in the homointerface and suppressing the outdiffusion of contaminants and point defects on the ZnO surface, which results in the formation of smooth wetting layer on the homointerface.},
doi = {10.1063/1.3630030},
url = {https://www.osti.gov/biblio/22038690}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 110,
place = {United States},
year = {2011},
month = {9}
}