Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells

Journal Article · Sun May 15 04:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3578636· OSTI ID:21560253

Chauveau, J -M; Vinter, B ^[1]; Teisseire, M; Morhain, C; Deparis, C ^[1]; Kim-Chauveau, H

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1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France)

We report on the properties of nonpolar a-plane (Zn,Mg)O/ZnO quantum wells (QW) grown by molecular beam epitaxy on r plane sapphire and a plane ZnO substrates. For the QWs grown on sapphire, the anisotropy of the lattice parameters of the (Zn,Mg)O barrier gives rise to an unusual in-plane strain state in the ZnO QWs, which induces a strong blue-shift of the excitonic transitions, in addition to the confinement effects. We observe this blue-shift in photoluminescence excitation experiments. The photoluminescence excitation energies of the QWs are satisfactorily simulated when taking into account the variation of the exciton binding energy with the QW width and the residual anisotropic strain. Then we compare the photoluminescence properties of homoepitaxial QWs grown on ZnO bulk substrate and heteroepitaxial QWs grown on sapphire. We show that the reduction of structural defects and the improvement of surface morphology are correlated with a strong enhancement of the photoluminescence properties: reduction of full width at half maximum, strong increase of the luminescence intensities. The comparison convincingly demonstrates the interest of homoepitaxial nonpolar QWs for bright UV emission applications.

• OSTI ID: 21560253
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALKALINE EARTH METAL COMPOUNDS
ANISOTROPY
BINDING ENERGY
CHALCOGENIDES
COMPARATIVE EVALUATIONS
CORUNDUM
CRYSTAL GROWTH METHODS
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EVALUATION
EXCITATION
EXCITONS
LATTICE PARAMETERS
LUMINESCENCE
MAGNESIUM COMPOUNDS
MANGANESE COMPOUNDS
MATERIALS
MINERALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
QUANTUM WELLS
QUASI PARTICLES
RESIDUAL STRESSES
SAPPHIRE
SEMICONDUCTOR MATERIALS
SIMULATION
STRAINS
STRESSES
SUBSTRATES
SURFACES
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
ZINC OXIDES