Resonant diffraction in stishovite near the K absorption edge of silicon
Journal Article
·
· Journal of Experimental and Theoretical Physics
- Moscow State University (Russian Federation)
The X-ray resonant diffraction in a stishovite crystal near the K absorption edge of silicon (E{sub K} = 1839 eV) is studied theoretically. For such a long wavelength, the only possible Bragg reflection is the 100 reflection, which is forbidden by the space group of the crystal. It can be excited solely due to anisotropy of the X-ray scattering amplitude. The crystal symmetry is used to determine the polarization and azimuthal dependence of the reflection intensity. Since this reflection is single, it can be detected upon diffraction from a powder, which substantially widens the possibilities of investigations. The numerical calculations of the energy dependences of the forbidden reflection intensity and the absorption coefficient demonstrate that the dipole-quadrupole, quadrupole-quadrupole, and dipole-octupole contributions to the resonant diffraction and absorption are small and that the dipole-dipole contribution is the most important one.
- OSTI ID:
- 22028075
- Journal Information:
- Journal of Experimental and Theoretical Physics, Journal Name: Journal of Experimental and Theoretical Physics Journal Issue: 5 Vol. 112; ISSN JTPHES; ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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