Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs

Journal Article · Mon Dec 05 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3665394· OSTI ID:22027831

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki ^[1]; Akiyama, Yoshihiro ^[2]; Sakaki, Hiroyuki ^[1]

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1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
2. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

• OSTI ID: 22027831
• Journal Information: Applied Physics Letters, Vol. 99, Issue 23; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFUSION
EV RANGE
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
HAMILTONIANS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOLUMINESCENCE
POLARIZATION
RECOMBINATION
SEMICONDUCTOR MATERIALS
SUBSTRATES