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Title: Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

Abstract

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Authors:
 [1];  [2];  [2];  [2];  [2];  [1];  [2]
  1. Eindhoven Univ. of Technology (Netherlands)
  2. Univ. of Michigan, Ann Arbor, MI (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1370081
Grant/Contract Number:  
SC0000957
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 9; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Emission spectroscopy; Quantum dots; Crystallographic defects; Photoluminescence; Doppler effect; Chemical bonding Epitaxy; Scanning tunneling microscopy; Ultra-high vacuum; Atomic force microscopy

Citation Formats

Smakman, E. P., DeJarld, M., Luengo-Kovac, M., Martin, A. J., Sih, V., Koenraad, P. M., and Millunchick, J. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping. United States: N. p., 2014. Web. doi:10.1063/1.4895783.
Smakman, E. P., DeJarld, M., Luengo-Kovac, M., Martin, A. J., Sih, V., Koenraad, P. M., & Millunchick, J. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping. United States. doi:10.1063/1.4895783.
Smakman, E. P., DeJarld, M., Luengo-Kovac, M., Martin, A. J., Sih, V., Koenraad, P. M., and Millunchick, J. Thu . "Height stabilization of GaSb/GaAs quantum dots by Al-rich capping". United States. doi:10.1063/1.4895783. https://www.osti.gov/servlets/purl/1370081.
@article{osti_1370081,
title = {Height stabilization of GaSb/GaAs quantum dots by Al-rich capping},
author = {Smakman, E. P. and DeJarld, M. and Luengo-Kovac, M. and Martin, A. J. and Sih, V. and Koenraad, P. M. and Millunchick, J.},
abstractNote = {GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.},
doi = {10.1063/1.4895783},
journal = {APL Materials},
issn = {2166-532X},
number = 9,
volume = 2,
place = {United States},
year = {2014},
month = {9}
}

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Cited by: 5 works
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