Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor

Journal Article · Mon Jan 09 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3675863· OSTI ID:22025405

Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

• OSTI ID: 22025405
• Journal Information: Applied Physics Letters, Vol. 100, Issue 2; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
CHARGE CARRIERS
DIFFUSION
ELECTRIC CONDUCTIVITY
EV RANGE
FABRICATION
FIELD EFFECT TRANSISTORS
GRAIN BOUNDARIES
ORGANIC SEMICONDUCTORS
POLYCRYSTALS
PRECIPITATION
SILICON
SILICON SOLAR CELLS
TEMPERATURE DEPENDENCE
THIN FILMS