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Structure and transport behavior of In-filled cobalt rhodium antimonide skutterudites

Journal Article · · Journal of Solid State Chemistry
 [1]; ; ;  [1]
  1. Department of Chemistry, Oregon State University, Corvallis, OR 97331 (United States)

The effect of indium icosahedral void-site filling on the transport properties of cobalt and rhodium antimonide solid solutions is investigated. Co{sub 4-x}Rh{sub x}Sb{sub 12} and indium-filled In{sub 0.1}Co{sub 4-x}Rh{sub x}Sb{sub 12} solid solutions were synthesized. Partial rhodium substitution produces a distinct clustering-induced lattice strain that is partly relieved upon indium substitution into the skutterudite icosahedral void-sites. Indium lowers the thermal conductivity of all samples near room temperature. A distinct increase in thermal conductivity is observed in all indium-filled rhodium substituted samples at elevated temperatures and is attributed to bipolar thermal conductivity. In addition, the indium-filled samples were subjected to a 6-day heat treatment at 673 K. Void-site filled indium was found to be metastable at this temperature, and was found to partially precipitate during the 6-day heat treatment; thereby presenting concerns over the long-term stability of thermoelectric devices based on indium-filled skutterudites. - Graphical Abstract: Strain in the cobalt rhodium skutterudite solid solutions decreases upon indium filling. Highlights: Black-Right-Pointing-Pointer Unfilled and indium-filled cobalt and rhodium skutterudite solid solutions were synthesized. Black-Right-Pointing-Pointer Indium filling stabilizes the cobalt and rhodium skutterudite solid solutions. Black-Right-Pointing-Pointer The thermoelectric properties of all compositions are reported. Black-Right-Pointing-Pointer The thermal conductivity of rhodium-rich compositions is strongly affected by indium filling. Black-Right-Pointing-Pointer Void-site filled indium was found to be metastable.

OSTI ID:
22012154
Journal Information:
Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Vol. . 190; ISSN 0022-4596; ISSN JSSCBI
Country of Publication:
United States
Language:
English