Beneficial effect of Se substitution on thermoelectric properties of Co{sub 4}Sb{sub 11.9-x}Te{sub x}Se{sub 0.1} skutterudites
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)
- Nanoscience and Technology Center, Wuhan University, No. 138, Bayi Road, Wuhan 430072 (China)
Skutterudite-based compounds, Co{sub 4}Sb{sub 12-x-y}Te{sub x}Se{sub y} (x=0.4, 0.5, 0.6 and y=0.0, 0.1), are synthesized by the solid state reaction and the spark plasma sintering methods, and their structure and the thermoelectric properties have been investigated systematically. It is found that Se doping results in decrease of the lattice parameter and refinement of the particle size compared with those of Se-free samples. The Se-doped samples do not yield a certain increase in the power factor, but show a significant depression in the lattice thermal conductivity. The highest dimensionless figure of merit ZT=1.09 is achieved at 800 K for the Co{sub 4}Sb{sub 11.3}Te{sub 0.6}Se{sub 0.1} compound, which is improved by 15% compared with that of Te alone doped Co{sub 4}Sb{sub 11.4}Te{sub 0.6} compound at the corresponding temperature. - Graphical abstract: The Te and Se co-doped Co{sub 4}Sb{sub 11.9-x}Te{sub x}Se{sub 0.1} skutterudites show amazingly lower thermal conductivity ({kappa}) and lattice thermal conductivity ({kappa}{sub L}) compared with those of Co{sub 4}Sb{sub 12-x}Te{sub x} skutterudites. Highlights: Black-Right-Pointing-Pointer Te and Se co-doped Co{sub 4}Sb{sub 12-x-y}Te{sub x}Se{sub y} compounds have been synthesized by the solid state reaction method. Black-Right-Pointing-Pointer Doping of Se resulted in decrease of the lattice parameter and refinement of the particle size. Black-Right-Pointing-Pointer The co-doped skutterudites show amazingly lower lattice thermal conductivity. Black-Right-Pointing-Pointer Co-doping with Te and Se is an attractive approach to enhance the TE performance of skutterudites.
- OSTI ID:
- 22149792
- Journal Information:
- Journal of Solid State Chemistry, Vol. 193; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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