Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y{sub 2}O{sub 2}S:Er,Yb luminophor

Journal Article · · Semiconductors
;  [1]
  1. Institute des NanoSciences (France)
Y{sub 2}O{sub 2}S luminophors doped with Er{sup 3+} and Yb{sup 3+} ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m{sup 2} of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y{sub 2}O{sub 2}S compound doped with 2 at % Er{sup 3+} ions and 6 at % Yb{sup 3+} ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is {eta} = 1.2 lm/W at an applied voltage of 1.5 V.
OSTI ID:
22004902
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 42; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English