Terbium luminescence in alumina xerogel fabricated in porous anodic alumina matrix under various excitation conditions

Journal Article · Fri Jul 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611070086· OSTI ID:22004770

Kortov, V S ^[1]; Orekhovskaya, T I; Nikolaenko, I A ^[2]; Pustovarov, V A; Zvonarev, S V; Slesarev, A I ^[1]; Prislopski, S Ya ^[3]

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1. Yeltsin Ural Federal University (Russian Federation)
2. Belarusian State University of Informatics and Radioelectronics (Belarus)
3. National Academy of Sciences of Belarus, Stepanov Institute of Physics (Belarus)

Terbium-doped alumina xerogel layers are synthesized by the sol-gel method in pores of a porous anodic alumina film 1 {mu}m thick with a pore diameter of 150-180 nm; the film is grown on a silicon substrate. The fabricated structures exhibit terbium photoluminescence with bands typical of trivalent terbium terms. Terbium X-ray luminescence with the most intense band at 542 nm is observed for the first time for such a structure. Morphological analysis of the structure by scanning electron microscopy shows the presence of xerogel clusters in pore channels, while the main pore volume remains unfilled and pore mouths remain open. The data obtained confirm the promising applications of fabricated structures for developing matrix converters of X-rays and other ionizing radiations into visible light. The possibilities of increasing luminescence intensity in the matrix converter are discussed.

• OSTI ID: 22004770
• Journal Information: Semiconductors, Vol. 45, Issue 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
DOPED MATERIALS
EXCITATION
FILMS
LAYERS
PHOTOLUMINESCENCE
POROUS MATERIALS
SCANNING ELECTRON MICROSCOPY
SILICON
SOL-GEL PROCESS
SUBSTRATES
TERBIUM
X RADIATION