Doping of the Bi{sub 1.9}Sb{sub 0.1}Te{sub 3} solid solution with Sn impurity

Journal Article · Mon Aug 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611080240· OSTI ID:22004764

Nemov, S A; Muhtarov, V R ^[1]; Svechnikova, T E ^[2]

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1. St. Petersburg State Technical University (Russian Federation)
2. Russian Academy of Sciences, Baikov Institute of Metallurgy and Materials Science (Russian Federation)

In (Bi{sub 1.9}Sb{sub 0.1}){sub 1-x}Sn{sub x}Te{sub 3} solid solution with different contents of Sn, the electrical conductivity ({sigma}{sub 11}) and the Hall (R{sub 123} and R{sub 321}), Seebeck (S{sub 11} and S{sub 33}), and Nernst-Ettingshausen (Q{sub 123} and Q{sub 321}) coefficients have been measured. It is shown that doping with tin strongly modifies temperature dependences of the kinetic coefficients. The effect of tin on electrical homogeneity of the samples has been studied: with increasing number of Sn atoms embedded, crystals become more homogeneous. These features indicate the presence of the quasi-local states of Sn in the valence band of Bi{sub 1.9}Sb{sub 0.1}Te{sub 3}. Within a one-band model, we estimated the effective mass of the density of hole states (m{sub d}), the energy gap extrapolated to 0 K (E{sub g0} = 0.20-0.25 eV), the energy of impurity states (E{sub Sn} Almost-Equal-To 40-45 meV), and the scattering parameter (r Almost-Equal-To 0.1-0.4). Numerical values of the scattering parameter indicate a mixed mechanism of scattering in the samples under investigation with dominant scattering at acoustic phonons. With increasing content of tin in the samples, the contribution of impurity scattering increases.

• OSTI ID: 22004764
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
EFFECTIVE MASS
ENERGY GAP
IMPURITIES
SCATTERING
SOLID SOLUTIONS
TEMPERATURE DEPENDENCE
TIN