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Effect of copper doping on kinetic phenomena in n-Bi{sub 2}Te{sub 2.85}Se{sub 0.15}

Journal Article · · Semiconductors
;  [1]
  1. Russian Academy of Sciences, Baikov Institute of Metallurgy and Materials Science (Russian Federation)
In single crystals of copper-doped and undoped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} solid solutions with an electron concentration close to 1 x 10{sup 19} cm{sup -3}, the temperature dependences are investigated for the Hall (R{sub 123}, R{sub 321}) and Seebeck (S{sub 11}) kinetic coefficients, the electrical-conductivity ({sigma}{sub 11}), Nernst-Ettingshausen (Q{sub 123}), and thermal conductivity (k{sub 11}) coefficients in the temperature range of 77-400 K. The absence of noticeable anomalies in the temperature dependences of the kinetic coefficients makes it possible to use the one-band model when analyzing the experimental results. Within the framework of the one-band model, the effective mass of density of states (m{sub d} {approx} 0.8m{sub 0}), the energy gap ({epsilon}{sub g} {approx} 0.2 eV), and the effective scattering parameter (r{sub eff} {approx} 0.2) are estimated. The obtained value of the parameter r{sub eff} is indicative of the mixed electron-scattering mechanism with the dominant scattering by acoustic phonons. Data on the thermal conductivity and the lattice resistivity obtained by subtracting the electron contribution according to the Wiedemann-Franz law are presented.
OSTI ID:
21087980
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 41; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English