Photosensitive thin-film In/p-Pb{sub x}Sn{sub 1-x}S Schottky barriers: Fabrication and properties
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- Scientific-Practical Center of the National Academy of Sciences of Belarus State Scientific and Production Association (Belarus)
Thin Pb{sub x}Sn{sub 1-x}S films are obtained by the 'hot-wall' method at substrate temperatures of 210-330 Degree-Sign C. The microstructure, composition, morphology, and electrical characteristics of films are investigated. On the basis of the obtained films, photosensitive In/p-Pb{sub x}Sn{sub 1-x}S Schottky barriers are fabricated for the first time. The photosensivity spectra of these structures are investigated, and the character of interband transitions and the band-gap values are determined from them. The conclusion is drawn that Pb{sub x}Sn{sub 1-x}S thin polycrystalline films may be used in solar-energy converters.
- OSTI ID:
- 22004755
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth and structure of photosensitive Pb{sub 1-x}Mn{sub x}Te(Ga) epitaxial films
Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels
Ion-implantation-induced damage and resonant levels in Pb/sub 1-x/Sn/sub x/Te
Journal Article
·
Thu May 15 00:00:00 EDT 2008
· Crystallography Reports
·
OSTI ID:22050968
Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels
Journal Article
·
Thu May 01 00:00:00 EDT 2014
· APL Materials
·
OSTI ID:22269161
Ion-implantation-induced damage and resonant levels in Pb/sub 1-x/Sn/sub x/Te
Journal Article
·
Mon Sep 01 00:00:00 EDT 1980
· J. Appl. Phys.; (United States)
·
OSTI ID:5031171