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Title: Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment

Abstract

Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy. The films contain neutral defects supposedly associated with tellurium nanoinclusions. Ion treatment electrically activates these defects, with a high concentration of donor centers ({approx}10{sup 17} cm{sup -3}) created in the films. These defects decompose in {approx}10{sup 3} min of aging at room temperature. Then the properties of the material are determined by the concentration of residual donors, which is found to be very low (down to {approx}10{sup 14} cm{sup -3}) for the films under study.

Authors:
; ;  [1]; ;  [2];  [3];  [4]
  1. SRC Carat, Research Institute for Materials (Ukraine)
  2. Giredmet State Institute for Rare Metals (Russian Federation)
  3. Rzeszow University, Institute of Physics (Poland)
  4. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22004748
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEFECTS; FILMS; IONS; LIQUID PHASE EPITAXY; TELLURIUM

Citation Formats

Izhnin, I. I., E-mail: granat@ipm.lviv.ua, Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., and Mynbaev, K. D. Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment. United States: N. p., 2011. Web. doi:10.1134/S1063782611090090.
Izhnin, I. I., E-mail: granat@ipm.lviv.ua, Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., & Mynbaev, K. D. Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment. United States. doi:10.1134/S1063782611090090.
Izhnin, I. I., E-mail: granat@ipm.lviv.ua, Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., and Mynbaev, K. D. Thu . "Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment". United States. doi:10.1134/S1063782611090090.
@article{osti_22004748,
title = {Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment},
author = {Izhnin, I. I., E-mail: granat@ipm.lviv.ua and Izhnin, A. I. and Fitsych, E. I. and Smirnova, N. A. and Denisov, I. A. and Pociask, M. and Mynbaev, K. D.},
abstractNote = {Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy. The films contain neutral defects supposedly associated with tellurium nanoinclusions. Ion treatment electrically activates these defects, with a high concentration of donor centers ({approx}10{sup 17} cm{sup -3}) created in the films. These defects decompose in {approx}10{sup 3} min of aging at room temperature. Then the properties of the material are determined by the concentration of residual donors, which is found to be very low (down to {approx}10{sup 14} cm{sup -3}) for the films under study.},
doi = {10.1134/S1063782611090090},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 45,
place = {United States},
year = {2011},
month = {9}
}