Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment

Journal Article · Thu Sep 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611090090· OSTI ID:22004748

Izhnin, A I; Fitsych, E I ^[1]; Smirnova, N A; Denisov, I A ^[2]; Pociask, M ^[3]; Mynbaev, K D ^[4]

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1. SRC Carat, Research Institute for Materials (Ukraine)
2. Giredmet State Institute for Rare Metals (Russian Federation)
3. Rzeszow University, Institute of Physics (Poland)
4. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy. The films contain neutral defects supposedly associated with tellurium nanoinclusions. Ion treatment electrically activates these defects, with a high concentration of donor centers ({approx}10{sup 17} cm{sup -3}) created in the films. These defects decompose in {approx}10{sup 3} min of aging at room temperature. Then the properties of the material are determined by the concentration of residual donors, which is found to be very low (down to {approx}10{sup 14} cm{sup -3}) for the films under study.

• OSTI ID: 22004748
• Journal Information: Semiconductors, Vol. 45, Issue 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEFECTS
FILMS
IONS
LIQUID PHASE EPITAXY
TELLURIUM