Electrical characteristics of Au/n-GaAs structures with thin and thick SiO{sub 2} dielectric layer
- Cankiri Karatekin University, Department of Physics, Faculty of Sciences (Turkey)
- Gazi University, Department of Physics, Faculty of Arts and Sciences (Turkey)
- Kirklareli University, Department of Physics, Faculty of Arts and Sciences (Turkey)
The aim of this study, to explain effects of the SiO{sub 2} insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 A) and thick (250 A) SiO{sub 2} insulator layers were deposited on n-type GaAs substrates using the plasma enganced chemical vapour deposition technique. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been carried out at room temperature. The main electrical parameters, such as ideality factor (n), zero-bias barrier height ({phi}{sub Bo}), series resistance (R{sub s}), leakage current, and interface states (N{sub ss}) for Au/SiO{sub 2}/n-GaAs SBDs have been investigated. Surface morphologies of the SiO{sub 2} dielectric layer was analyzed using atomic force microscopy. The results show that SiO{sub 2} insulator layer thickness very affects the main electrical parameters. Au/n-GaAs SBDs with thick SiO{sub 2} insulator layer have low leakage current level, small ideality factor, and low interface states. Thus, Au/n-GaAs SBDs with thick SiO{sub 2} insulator layer shows better diode characteristics than other.
- OSTI ID:
- 22004724
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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