AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al 0.9 Ga 0.1 N current spreading layer

Maeda, Takuya; Page, Ryan; Nomoto, Kazuki; Toita, Masato; Xing, Huili Grace; Jena, Debdeep

doi:10.35848/1882-0786/ac702e

AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al _0.9 Ga _0.1 N current spreading layer

Journal Article · 27 May 2022 · Applied Physics Express

DOI:https://doi.org/10.35848/1882-0786/ac702e· OSTI ID:1981213

^[1]; Page, Ryan; Nomoto, Kazuki; Toita, Masato; Xing, Huili Grace; Jena, Debdeep

OSTI

Abstract

An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate. An undoped AlN layer, a Si-doped Al_0.9Ga_0.1N current spreading layer and an AlN buffer layer were grown by plasma-enhanced molecular beam epitaxy. The epitaxial AlN layer was etched down to the n-Al_0.9Ga_0.1N layer to form an Ohmic contact. Ni/Au and V/Al/Ni/Au were deposited on the top AlN layer as Schottky contacts and on the exposed n-Al_0.9Ga_0.1N layer as Ohmic contacts, respectively. The Ohmic characteristics on the n-Al_0.9Ga_0.1N layer, capacitance–voltage (C–V) and current–voltage (I–V) characteristics of the AlN SBD were investigated.

Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0021230

OSTI ID:: 1981213

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 6 Vol. 15; ISSN 1882-0778

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

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