Electron transport simulation in resonant-tunneling GaN/AlGaN heterostructures

Journal Article · Thu Dec 15 00:00:00 EST 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611130100· OSTI ID:22004677

Zhuravlev, M N ^[1]; Kapaev, V V ^[2]

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1. Moscow State Institute of Electronic Engineering (Technical University) (Russian Federation)
2. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

A numerical method for electron transport calculations in resonant-tunneling GaN/AlGaN heterostructures has been developed on the basis of a self-consistent solution of the Schroedinger and Poisson equations. Dependences of the system's transmission coefficient on the external field and of the peak current on the ratio between the well and barrier widths have been studied for a double-barrier resonant-tunneling diode. For technical applications, the optimal values of the structure's parameters have been found.

• OSTI ID: 22004677
• Journal Information: Semiconductors, Vol. 45, Issue 13; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRONS
GALLIUM NITRIDES
PEAKS
POISSON EQUATION
SIMULATION
TUNNEL DIODES
TUNNEL EFFECT